STD616A high voltage npn power transistor n reverse pins out vs standard ipak (to-251) / dpak (to-252) packages n high voltage capability n high dc current gain n through-hole ipak (to-251) power package in tube (suffix "-1") n surface-mounting dpak (to-252) power package in tape & reel (suffix "t4") n minimum lot-to-lot spread for reliable operation applications: n switch mode power supplies description the STD616A is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. ? internal schematic diagram june 2003 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 1000 v v ceo collector-emitter voltage (i b = 0) 450 v v ebo emitter-base voltage (i c = 0) 12 v i c collector current 1.6 a i cm collector peak current (t p < 5 ms) 2.4 a i b base current 0.8 a i bm base peak current (t p < 5 ms) 1.2 a p tot total dissipation at t c = 25 o c20w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 3 2 1 ipak to-251 (suffix "-1") 1 3 dpak to-252 (suffix "t4") 1/6
thermal data r thj-case thermal resistance junction-case max 6.25 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0 v) v ce = 1000 v v ce = 1000 v t j = 125 o c 50 0.5 m a ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 100 ma l = 25 mh 450 v v ebo emitter-base voltage (i c = 0) i e = 1 ma 12 v v ce(sat) * collector-emitter saturation voltage i c = 250 ma i b = 65 ma i c = 0.8 a i b = 250 ma 0.3 0.5 v v v be(sat) * base-emitter saturation voltage i c = 250 ma i b = 65 ma i c = 0.8 a i b = 250 ma 1 1.2 v v h fe * dc current gain i c = 200 m a v ce = 5 v i c = 300 ma v ce = 5 v i c = 480 ma v ce = 5 v i c = 1.6 a v ce = 5 v 17 25 12 4 t on t s t f resistive load turn on time storage time fall time v cc = 250 v i c = 250 ma i b1 = 65 ma i b2 = -130 ma 0.2 5 0.65 m s m s m s t on t s t f resistive load turn on time storage time fall time v cc = 250 v i c = 0.8 a i b1 = 160 ma i b2 = -0.4 a 1 2.5 0.35 m s m s m s t s t f inductive load storage time fall time v cl = 300 v i c = 250 ma i b1 = 65 ma i b2 = -130 ma l = 200 m h 5 0.5 m s m s t s t f inductive load storage time fall time v cl = 300 v i c = 0.8 a i b1 = 160 ma i b2 = -0.4 a l = 200 m h 2.5 0.25 m s m s * pulsed: pulse duration = 300 m s, duty cycle 1.5 % STD616A 2/6
safe operating area reverse biased soa derating curve STD616A 3/6
dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a3 0.70 1.30 0.028 0.051 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 b3 0.85 0.033 b5 0.30 0.012 b6 0.95 0.037 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.237 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 15.90 16.30 0.626 0.642 l 9.00 9.40 0.354 0.370 l1 0.80 1.20 0.031 0.047 l2 0.80 1.00 0.031 0.039 v1 10 o 10 o p032n_e to-251 (ipak) mechanical data STD616A 4/6
dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data STD616A 5/6
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